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| PD - 97119 IRF8721PBF Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Gate Charge l Low RDS(on) at 4.5V VGS l Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free Description HEXFET(R) Power MOSFET VDSS RDS(on) max Qg 30V 8.5m:@VGS = 10V 8.3nC A A D D D D S S S G 1 2 3 4 8 7 6 5 Top View SO-8 The IRF8721PBF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PBF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 20 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V c A W W/C C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RJL RJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ. --- --- Max. 20 50 Units C/W Notes through are on page 9 www.irf.com 07/30/07 1 IRF8721PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 --- --- --- 1.35 --- --- --- --- --- 27 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 6.9 10.6 --- -6.2 --- --- --- --- --- 8.3 2.0 1.0 3.2 2.0 4.2 5.0 1.8 8.2 11 8.1 7.0 1040 229 114 --- --- 8.5 12.5 2.35 --- 1.0 150 100 -100 --- 12 --- --- --- --- --- --- 3.0 --- --- --- --- --- --- --- pF ns nC nC VDS = 15V VGS = 4.5V ID = 11A S nA V mV/C A V m Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A V/C Reference to 25C, ID = 1mA e e VDS = VGS, ID = 25A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 11A See Fig. 16a and 16b VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A RG = 1.8 See Fig. 15a VGS = 0V VDS = 15V = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Typ. --- --- Max. 68 11 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 14 15 3.1 A 112 1.0 21 23 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 25C, IF = 11A, VDD = 15V di/dt = 300A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF8721PBF 1000 TOP 1000 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 BOTTOM 10 BOTTOM 1 10 0.1 2.3V 0.01 0.1 1 60s PULSE WIDTH Tj = 25C 1 10 100 0.1 2.3V 60s PULSE WIDTH Tj = 150C 10 100 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 ID, Drain-to-Source Current (A) 100 60s PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) VDS = 15V ID = 14A VGS = 10V 10 1.5 1 TJ = 150C TJ = 25C 1.0 0.1 0.01 1.0 2.0 3.0 4.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF8721PBF 10000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 16 ID= 11A VDS = 24V VDS= 15V 12 C, Capacitance (pF) 1000 Ciss Coss Crss 8 4 100 1 10 100 0 0 5 10 15 20 25 Qg, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100 100 100sec 10 1msec 10msec 1 TA = 25C Tj = 150C Single Pulse 0.1 1 10 100 TJ = 150C 10 1 TJ = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 0.1 VSD, Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF8721PBF 16 2.4 ID , Drain Current (A) 12 VGS(th) Gate threshold Voltage (V) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 25A 8 4 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TA, Ambient Temperature (C) TJ, Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature 100 D = 0.50 Thermal Response ( Z thJA ) 10 0.20 0.10 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a 1 2 3 4 4 1 0.1 Ci= i/Ri Ci i/Ri Ri (C/W) (sec) 1.935595 0.000148 7.021545 0.019345 26.61013 0.81305 14.43961 26.2 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8721PBF m RDS (on), Drain-to -Source On Resistance ( ) 16 300 EAS, Single Pulse Avalanche Energy (mJ) ID = 14A 14 250 12 200 ID 0.83A 1.05A BOTTOM 11A TOP TJ = 125C 150 10 100 8 TJ = 25C 50 6 2.0 4.0 6.0 8.0 10.0 0 25 50 75 100 125 150 VGS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V VDS L DRIVER RG 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG V10V GS Pulse Width 1 s Duty Factor 0.1 RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD 10% VGS td(on) tr t d(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms 6 www.irf.com IRF8721PBF Current Regulator Same Type as D.U.T. Id Vds Vgs 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgodr Qgd Qgs2 Qgs1 Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF8721PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A A1 b INCH E S MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MIL L IME T E R S MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 B AS IC .025 B AS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 B AS IC 0.635 B AS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECTIFIER LOGO XXXX F7101 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF8721PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.09mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007 www.irf.com 9 |
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